低温脉冲离子束蒸发制备薄膜

Conference Record of the Twenty-Fifth International Power Modulator Symposium, 2002 and 2002 High-Voltage Workshop. Pub Date : 2002-06-30 DOI:10.1109/MODSYM.2002.1189535

K. Yatsui, H. Suematsu, S. Yang, R. Iwashita, T. Nagahama, N. Uchitomi, W. Jiang, T. Arikado

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引用次数: 0

摘要

利用脉冲离子束与固体靶相互作用产生的高密度烧蚀等离子体，在低温下制备薄膜，这被称为离子束蒸发。除1988年首次制备ZnS外，还成功制备了YBCO、(SrBa)TiO/sub 3/、SrAl/sub 2/O/sub 4/:Eu、多晶硅、ITO和磷灰石等薄膜。由于其中一些已经在其他地方报道过，本文还介绍了一些IBE制备薄膜的新结果，如Si-Ge或HfO/sub 2/。

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Pulsed ion beam evaporation at low temperature for the preparation of thin films

Using high-density ablation plasma produced by pulsed ion beam interaction with solid targets, it has been demonstrated by the present authors to prepare thin films at low temperature, which was called ion beam evaporation. In addition to the first preparation of ZnS in 1988, the preparation of many films has been succeeded such as YBCO, (SrBa)TiO/sub 3/, SrAl/sub 2/O/sub 4/:Eu, poly-Si, ITO, and apatite. Since some of them have been already reported elsewhere, some other new results of the preparation of thin films by IBE are presented such as Si-Ge or HfO/sub 2/.

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Conference Record of the Twenty-Fifth International Power Modulator Symposium, 2002 and 2002 High-Voltage Workshop.

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