采用SiN/sub x/钝化和pt埋栅两步凹槽新工艺及其在0.15 /spl mu/m Al/sub 0.6/InAs/In/sub 0.65/GaAs hemt上的应用

Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC. Pub Date : 2004-06-21 DOI:10.1109/DRC.2004.1367787

Daehyun Kim, Kangil Lee, Jaehak Lee, K. Seo

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引用次数: 0

摘要

采用SiN/sub x/钝化和pt埋栅工艺成功地实现了一种新的两步凹槽(TSR)技术。将所开发的两步凹槽(TSR)工艺应用于0.15 /spl μ m Al/sub 0.6/InAs/In/sub 0.65/GaAs HEMTs的制备中，得到了显著的改善，如抑制了扭结效应，提高了G/sub m、max/、f/sub T/和f/sub max/。由于侧凹区域被SiN/sub x/介电层完全钝化，这种TSR技术还提供了良好可靠性的额外优势。

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A new two-step recess technology using SiN/sub x/ passivation and Pt-buried gate process and its application to 0.15 /spl mu/m Al/sub 0.6/InAs/In/sub 0.65/GaAs HEMTs

A new two-step recess (TSR) technology was successfully demonstrated using SiN/sub x/ passivation and Pt-buried gate process. Applying the developed two-step recess (TSR) process to the fabrication of 0.15 /spl mu/m Al/sub 0.6/InAs/In/sub 0.65/GaAs HEMTs, remarkable improvements could be obtained such as the suppression of the kink effect, and the increase of G/sub m,max/, f/sub T/ and f/sub max/. Since the side-recessed region was fully passivated by SiN/sub x/ dielectric layer, this TSR technology is also to offer additional advantage of good reliability.

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Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.

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