非晶硅肖特基二极管中电子输运的蒙特卡罗模拟

Conference Proceedings. IEEE Canadian Conference on Electrical and Computer Engineering (Cat. No.98TH8341) Pub Date : 1998-05-24 DOI:10.1109/CCECE.1998.685618

I. Lian, R. Hornsey, S. Chamberlain

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引用次数: 0

摘要

用蒙特卡罗模拟方法研究了反偏置非晶硅肖特基二极管中的电子输运。这些模拟已应用于不同温度下的飞行时间几何形状，结果与文献中的结果一致。模拟还用于研究二极管对偏压阶跃变化的响应。这种情况对于肖特基二极管在大面积x射线传感器上的应用具有重要意义。

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Monte Carlo simulation of electron transport in amorphous silicon Schottky diodes

Electron transport in reverse-biased amorphous silicon Schottky diodes has been studied by Monte Carlo simulation. These simulations have been applied to a time of flight geometry at various temperatures, and the results have been found to agree well with those from the literature. Simulations have also been used to investigate the response of the diode to step changes of bias. This case is of importance for the application of Schottky diodes to large-area X-ray sensors.

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Conference Proceedings. IEEE Canadian Conference on Electrical and Computer Engineering (Cat. No.98TH8341)

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