基于CMOS技术的5阶Gm-C低通有源滤波器的VLSI设计

Aurica Zara, R. Bozomitu
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引用次数: 0

摘要

本文提出了一种基于CMOS技术的5阶差分Gm-C低通有源滤波器的VLSI设计方法。电路结构包括一个一阶Gm-C结构、两个双型结构和接地电容器。为了增加输出摆幅,滤波器结构中使用的有源元件基于全差分折叠级联运算跨导放大器。所提出的滤波器的截止频率可以通过约27 MHz频率的外部直流偏置电流进行调谐。本文介绍了一种基于0.18µm CMOS技术的5阶差分Gm-C低通有源滤波器的完整设计,从电学原理图到布局实现。布置前和布置后的仿真验证了理论结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
VLSI Design of a 5th-order Gm-C Low-Pass Active Filter in CMOS Technology
In this paper a VLSI design of a 5th order differential Gm-C low-pass active filter in CMOS technology and for different approximations is presented. The circuit architecture includes a first order Gm-C structure, two biquad-type structures and grounded capacitors. In order to increase the output swing, the active element used in the filter structure is based on a fully differential folded-cascode operational transconductance amplifier. The cutoff frequency of the proposed filter can be tuned through an external DC bias current around the 27 MHz frequency. The paper presents the complete design of a 5th order differential Gm-C low-pass active filter from the electric schematic to the layout implementation in a 0.18 µm CMOS technology. The pre-layout and post-layout simulations confirm the theoretical results.
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