恒定偏置老化后碳纳米管发射极阵列的电子发射电流增强

2007 IEEE 20th International Vacuum Nanoelectronics Conference Pub Date : 2007-07-08 DOI:10.1109/IVNC.2007.4480990

Ki Seo Kim, Ryu Je Hwang, C. Lee, J. Ahn, Jin Jang, K. Park

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引用次数: 0

摘要

在这项研究中，我们研究了偏置老化对排列良好的碳纳米管发射极阵列电子发射的影响。结果表明，我们通过偏置老化获得了增强的电子发射特性。为了制造场发射阵列(FEA)，使用三极管DC-PECVD进行碳纳米管的生长，在衬底支架电极上方放置网格。利用电阻辅助图像化的生长过程非常简单且成本低。

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Enhanced electron emission current of carbon nanotubes emitter arrays after constant bias-aging

In this study, we investigated the effect of bias-aging on electron emission from well-aligned CNT-emitter arrays. As a result, we obtained enhanced electron emission characteristics by bias-aging. In order to make the field emission array (FEA), growth of CNTs was carried out with a triode DC-PECVD with a mesh grid palced above the substrate holder electrode. The growth process by using the resist-assisted patterning is very simple and low cost to fabricate emitter arrays.

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2007 IEEE 20th International Vacuum Nanoelectronics Conference

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