{"title":"垂直隧穿路径的InAs-Si异质结双栅隧道场效应管分析","authors":"H. Carrillo-Nuñez, M. Luisier, A. Schenk","doi":"10.1109/ESSDERC.2015.7324774","DOIUrl":null,"url":null,"abstract":"InAs-Si double-gate TFETs exploiting the two-dimensional (2D) density-of-state (DOS) switch are studied. A full-band and atomistic quantum transport simulator based on the sp3d5s* tight-binding model is used to solve the quantum transport problem taking into account both lateral and vertical band-to-band tunneling paths. TFETs with only vertical tunneling components are also investigated. Our findings suggest that InAs-Si 2D-2D TFETs might offer a device solution with both steep sub-thermal sub-threshold swing (SS) and high ON-current. In the best case of an extremely thin InAs-Si 2D-2D TFET the minimal swing reaches SS = 12mV/dec and the ON-current 241 A/m.","PeriodicalId":332857,"journal":{"name":"2015 45th European Solid State Device Research Conference (ESSDERC)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Analysis of InAs-Si heterojunction double-gate tunnel FETs with vertical tunneling paths\",\"authors\":\"H. Carrillo-Nuñez, M. Luisier, A. Schenk\",\"doi\":\"10.1109/ESSDERC.2015.7324774\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"InAs-Si double-gate TFETs exploiting the two-dimensional (2D) density-of-state (DOS) switch are studied. A full-band and atomistic quantum transport simulator based on the sp3d5s* tight-binding model is used to solve the quantum transport problem taking into account both lateral and vertical band-to-band tunneling paths. TFETs with only vertical tunneling components are also investigated. Our findings suggest that InAs-Si 2D-2D TFETs might offer a device solution with both steep sub-thermal sub-threshold swing (SS) and high ON-current. In the best case of an extremely thin InAs-Si 2D-2D TFET the minimal swing reaches SS = 12mV/dec and the ON-current 241 A/m.\",\"PeriodicalId\":332857,\"journal\":{\"name\":\"2015 45th European Solid State Device Research Conference (ESSDERC)\",\"volume\":\"49 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-11-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 45th European Solid State Device Research Conference (ESSDERC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.2015.7324774\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 45th European Solid State Device Research Conference (ESSDERC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2015.7324774","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Analysis of InAs-Si heterojunction double-gate tunnel FETs with vertical tunneling paths
InAs-Si double-gate TFETs exploiting the two-dimensional (2D) density-of-state (DOS) switch are studied. A full-band and atomistic quantum transport simulator based on the sp3d5s* tight-binding model is used to solve the quantum transport problem taking into account both lateral and vertical band-to-band tunneling paths. TFETs with only vertical tunneling components are also investigated. Our findings suggest that InAs-Si 2D-2D TFETs might offer a device solution with both steep sub-thermal sub-threshold swing (SS) and high ON-current. In the best case of an extremely thin InAs-Si 2D-2D TFET the minimal swing reaches SS = 12mV/dec and the ON-current 241 A/m.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
