基于聚合物沉积工艺(PDP)控制sub-65nm及以上工艺的接触孔畸变

The 17th Annual SEMI/IEEE ASMC 2006 Conference Pub Date : 2006-05-22 DOI:10.1109/ASMC.2006.1638728

Judy Wang, S. Sung, Shawming Ma

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引用次数: 0

摘要

研究了介质刻蚀过程中的接触孔畸变，发现接触孔畸变主要是由于刻蚀前后的低掩模选择性和较差的掩模表面控制(粗糙度、条纹、点蚀或针孔)引起的。为了克服光刻胶(PR)和富c材料作为掩膜的图案变形问题，研究了表面粗糙度和掩膜选择性。采用聚合物沉积工艺(PDP)改善了掩膜的降解，并控制了接触轮廓。本文重点讨论了PDP的化学选择、PDP时间的决定以及在BARC(底部抗反射涂层)打开步骤前后使用PDP的问题

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Control of Contact Hole Distortion by Using Polymer Deposition Process (PDP) for sub-65nm Technology and Beyond

Contact hole distortion in dielectric etching was investigated and it is found that the contact hole distortion is mainly caused by low mask selectivity, poor mask surface control (roughness, striation, pitting or pin hole) before and after etching. The surface roughness and mask selectivity have been studied to overcome the problem of pattern deformation of photoresist (PR) and C-rich materials as the mask. By using the polymer deposition process (PDP), the mask degradation is improved and the contact profile is well controlled. This paper focuses on the discussion of PDP chemistry selection, PDP time decision, and PDP used at before or after BARC (bottom anti-reflective coating) open step

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The 17th Annual SEMI/IEEE ASMC 2006 Conference

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