具有n -缓冲层的CMOS兼容超级结LDMOST

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. Pub Date : 2005-05-23 DOI:10.1109/ISPSD.2005.1487976

I. Park, C. Salama

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引用次数: 40

摘要

报道了一种CMOS兼容的超级结LDMOST (SJ-LDMOST)结构，该结构可以减少衬底辅助损耗效应。所提出的结构在柱和p衬底之间使用n缓冲层来实现柱、n缓冲层和p衬底之间的电荷补偿。新结构具有高击穿电压、低导通电阻、优异的栅极电荷特性和降低对柱中掺杂不平衡的敏感性。

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CMOS compatible super junction LDMOST with N-buffer layer

A CMOS compatible super junction LDMOST (SJ-LDMOST) structure, which reduces substrate-assisted depletion effects, is reported. The proposed structure uses a N-buffer layer between the pillars and the P-substrate to achieve charge compensation between the pillars, the N-buffer layer and the P-substrate. The new structure features high breakdown voltage, low on resistance, excellent gate charge characteristics and reduced sensitivity to doping imbalance in the pillars.

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来源期刊

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.

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