时延约束寄存器传输级顺序电路的鲁棒自顶向下动态功率估计方法

Sriram Sambamurthy, J. Abraham, R. Tupuri
{"title":"时延约束寄存器传输级顺序电路的鲁棒自顶向下动态功率估计方法","authors":"Sriram Sambamurthy, J. Abraham, R. Tupuri","doi":"10.1109/VLSI.2008.56","DOIUrl":null,"url":null,"abstract":"We present a top-down dynamic power estimation methodology for delay constrained sequential circuits. The methodology works at the register transfer level (RT-Level), and applies to both structural and behavioral descriptions of circuits. The average power consumption of a circuit varies with the worst case cycle-time or frequency of operation. As the cycle-time is reduced, the increase in the capacitance of the circuit due to technology mapping and optimization is captured by our technique at the RT-Level using the principles of logical effort. Switching activity is obtained at the RT-Level visible nodes through RT-Level functional simulation. This information is utilized to approximate the activities at the remaining nodes of the circuit and combined with capacitance to estimate dynamic power. Power estimation results for RT-Level sequential circuits indicate good accuracy (average error<10%) with respect to the reference values obtained by detailed gate-level power analysis. The power consumed by a circuit varies with the target library and technology. Our methodology is parameterizable and the results obtained for different target libraries at 0.18 mum TSMC and 0.13 mum UMC technologies are consistent, indicating the robustness of our technique. The applicability of our methodology in design frameworks consisting of bottom-up techniques is also discussed.","PeriodicalId":143886,"journal":{"name":"21st International Conference on VLSI Design (VLSID 2008)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2008-01-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"A Robust Top-Down Dynamic Power Estimation Methodology for Delay Constrained Register Transfer Level Sequential Circuits\",\"authors\":\"Sriram Sambamurthy, J. Abraham, R. Tupuri\",\"doi\":\"10.1109/VLSI.2008.56\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present a top-down dynamic power estimation methodology for delay constrained sequential circuits. The methodology works at the register transfer level (RT-Level), and applies to both structural and behavioral descriptions of circuits. The average power consumption of a circuit varies with the worst case cycle-time or frequency of operation. As the cycle-time is reduced, the increase in the capacitance of the circuit due to technology mapping and optimization is captured by our technique at the RT-Level using the principles of logical effort. Switching activity is obtained at the RT-Level visible nodes through RT-Level functional simulation. This information is utilized to approximate the activities at the remaining nodes of the circuit and combined with capacitance to estimate dynamic power. Power estimation results for RT-Level sequential circuits indicate good accuracy (average error<10%) with respect to the reference values obtained by detailed gate-level power analysis. The power consumed by a circuit varies with the target library and technology. Our methodology is parameterizable and the results obtained for different target libraries at 0.18 mum TSMC and 0.13 mum UMC technologies are consistent, indicating the robustness of our technique. The applicability of our methodology in design frameworks consisting of bottom-up techniques is also discussed.\",\"PeriodicalId\":143886,\"journal\":{\"name\":\"21st International Conference on VLSI Design (VLSID 2008)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-01-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"21st International Conference on VLSI Design (VLSID 2008)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSI.2008.56\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"21st International Conference on VLSI Design (VLSID 2008)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSI.2008.56","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

摘要

提出了一种自顶向下的时延约束顺序电路动态功率估计方法。该方法在寄存器转移级(rt级)工作,并适用于电路的结构和行为描述。电路的平均功耗随最坏情况下的周期时间或工作频率而变化。随着循环时间的减少,由于技术映射和优化而导致的电路电容的增加被我们的技术在rt级使用逻辑努力原则捕获。通过RT-Level功能仿真,在RT-Level可见节点上获得切换活动。利用这些信息来估计电路剩余节点的活动,并结合电容来估计动态功率。rt级时序电路的功率估计结果表明,与详细的门级功率分析得到的参考值相比,精度较高(平均误差<10%)。电路所消耗的功率随目标库和技术的不同而不同。我们的方法是可参数化的,并且在0.18 μ m TSMC和0.13 μ m UMC技术下获得的不同目标库的结果是一致的,表明我们的技术具有鲁棒性。本文还讨论了我们的方法在由自下而上技术组成的设计框架中的适用性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Robust Top-Down Dynamic Power Estimation Methodology for Delay Constrained Register Transfer Level Sequential Circuits
We present a top-down dynamic power estimation methodology for delay constrained sequential circuits. The methodology works at the register transfer level (RT-Level), and applies to both structural and behavioral descriptions of circuits. The average power consumption of a circuit varies with the worst case cycle-time or frequency of operation. As the cycle-time is reduced, the increase in the capacitance of the circuit due to technology mapping and optimization is captured by our technique at the RT-Level using the principles of logical effort. Switching activity is obtained at the RT-Level visible nodes through RT-Level functional simulation. This information is utilized to approximate the activities at the remaining nodes of the circuit and combined with capacitance to estimate dynamic power. Power estimation results for RT-Level sequential circuits indicate good accuracy (average error<10%) with respect to the reference values obtained by detailed gate-level power analysis. The power consumed by a circuit varies with the target library and technology. Our methodology is parameterizable and the results obtained for different target libraries at 0.18 mum TSMC and 0.13 mum UMC technologies are consistent, indicating the robustness of our technique. The applicability of our methodology in design frameworks consisting of bottom-up techniques is also discussed.
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