{"title":"一种带有符号内自适应间歇Rx的2.4GHz ism波段数字CMOS无线收发器","authors":"H. Ishizaki, K. Nose, M. Mizuno","doi":"10.1109/VLSIC.2007.4342775","DOIUrl":null,"url":null,"abstract":"The first achievement of intra-symbol adaptively intermittent receiver has been developed with an inductor-less LNA by 90-nm digital CMOS, and Rx characteristics have been measured (Rx power: 4.5 mW, BER: 4.1times10-5, received signal intensity: -73 dBm, when Rx is enabled within only 8.2% of a single symbol period) with an on-chip stair-like shaping PA (3rd order harmonics of -40.6 dBc) and a digitally controlled direct RF carrier phase modulator (ACPR<-40 dBc).","PeriodicalId":261092,"journal":{"name":"2007 IEEE Symposium on VLSI Circuits","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"A 2.4GHz ISM-band digital CMOS wireless transceiver with an intra-symbol adaptively intermittent Rx\",\"authors\":\"H. Ishizaki, K. Nose, M. Mizuno\",\"doi\":\"10.1109/VLSIC.2007.4342775\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The first achievement of intra-symbol adaptively intermittent receiver has been developed with an inductor-less LNA by 90-nm digital CMOS, and Rx characteristics have been measured (Rx power: 4.5 mW, BER: 4.1times10-5, received signal intensity: -73 dBm, when Rx is enabled within only 8.2% of a single symbol period) with an on-chip stair-like shaping PA (3rd order harmonics of -40.6 dBc) and a digitally controlled direct RF carrier phase modulator (ACPR<-40 dBc).\",\"PeriodicalId\":261092,\"journal\":{\"name\":\"2007 IEEE Symposium on VLSI Circuits\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-06-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE Symposium on VLSI Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIC.2007.4342775\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE Symposium on VLSI Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.2007.4342775","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 2.4GHz ISM-band digital CMOS wireless transceiver with an intra-symbol adaptively intermittent Rx
The first achievement of intra-symbol adaptively intermittent receiver has been developed with an inductor-less LNA by 90-nm digital CMOS, and Rx characteristics have been measured (Rx power: 4.5 mW, BER: 4.1times10-5, received signal intensity: -73 dBm, when Rx is enabled within only 8.2% of a single symbol period) with an on-chip stair-like shaping PA (3rd order harmonics of -40.6 dBc) and a digitally controlled direct RF carrier phase modulator (ACPR<-40 dBc).
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