采用厚光刻胶az10xt的mems应用的高分辨率投影光刻

2022 Smart Systems Integration (SSI) Pub Date : 2022-04-27 DOI:10.1109/ssi56489.2022.9901437

Sebastian Schermer, C. Helke, Danhe Song, D. Reuter, H. Kuhn

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引用次数: 0

摘要

本文采用高分辨率投影光刻技术，结合AZ 10XT厚光刻胶，实现了一种可用于深度反应离子刻蚀(DRIE)的刻蚀掩膜。通过实验设计，研究了全晶圆级工艺的适宜参数。从0.5 μm到5 μm的不同尺寸的结构用于寻找mems应用的最高宽高比。

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High-resolution projection lithography for MEMS-applications using thick photoresist AZ 10XT

In this paper, we are using high-resolution projection lithography together with AZ 10XT thick photoresist to realize an etching mask, which can be used for deep reactive ion etching (DRIE). With a design of experiment (DoE) suitable parameters for a full wafer level process are investigated. Structures with different size from 0.5 μm to 5 μm are used to find the highest aspect ratios for MEMS-applications.

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2022 Smart Systems Integration (SSI)

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