化合物半导体纳米电子学研究现状及关键问题

H. Hasegawa
{"title":"化合物半导体纳米电子学研究现状及关键问题","authors":"H. Hasegawa","doi":"10.1109/LDS.1998.713841","DOIUrl":null,"url":null,"abstract":"Recent progress of the \"nanofabrication\" technology has opened up exciting possibilities of constructing novel quantum nanoelectronics directly based on the quantum mechanics where wave-particle motions of individual electrons are controlled by artificial quantum structures such as quantum wells, quantum wires, quantum dots and single and multiple tunneling barriers so as to realize devices with new functions and higher performances. This paper discusses the present status and key issues of research on the compound semiconductor quantum nanoelectronics, introducing recent results obtained by author's group at Research Center for Interface Quantum Electronics (RCIQE) as specific examples. Since electrons manifest predominantly either wave-nature or particle-nature depending on their environments, one can conceptually envisage two kinds of nanoelectronics in the quantum regime, i.e., \"quantum wave electronics\" and \"single electronics\". A particular emphasis is paid here on single electronics because of its promising prospects. Main topics include prospects, expected roles and nano-fabrication issues of compound semiconductor single electron devices as well as key issues on compound semiconductor quantum wave devices.","PeriodicalId":326271,"journal":{"name":"Proceedings. Second International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures (Cat. No. 98EX199)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Status and key issues for compound semiconductor nanoelectronics\",\"authors\":\"H. Hasegawa\",\"doi\":\"10.1109/LDS.1998.713841\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Recent progress of the \\\"nanofabrication\\\" technology has opened up exciting possibilities of constructing novel quantum nanoelectronics directly based on the quantum mechanics where wave-particle motions of individual electrons are controlled by artificial quantum structures such as quantum wells, quantum wires, quantum dots and single and multiple tunneling barriers so as to realize devices with new functions and higher performances. This paper discusses the present status and key issues of research on the compound semiconductor quantum nanoelectronics, introducing recent results obtained by author's group at Research Center for Interface Quantum Electronics (RCIQE) as specific examples. Since electrons manifest predominantly either wave-nature or particle-nature depending on their environments, one can conceptually envisage two kinds of nanoelectronics in the quantum regime, i.e., \\\"quantum wave electronics\\\" and \\\"single electronics\\\". A particular emphasis is paid here on single electronics because of its promising prospects. Main topics include prospects, expected roles and nano-fabrication issues of compound semiconductor single electron devices as well as key issues on compound semiconductor quantum wave devices.\",\"PeriodicalId\":326271,\"journal\":{\"name\":\"Proceedings. Second International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures (Cat. No. 98EX199)\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-03-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings. Second International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures (Cat. No. 98EX199)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LDS.1998.713841\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings. Second International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures (Cat. No. 98EX199)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LDS.1998.713841","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

“纳米制造”技术的最新进展为直接基于量子力学构建新型量子纳米电子学开辟了令人兴奋的可能性,其中单个电子的波粒运动由量子阱、量子线、量子点和单、多隧道势垒等人工量子结构控制,从而实现具有新功能和更高性能的器件。本文讨论了化合物半导体量子纳米电子学的研究现状和关键问题,并以界面量子电子学研究中心(RCIQE)课题组近期取得的研究成果为例进行了介绍。由于电子主要表现为波性或粒子性,这取决于它们的环境,人们可以在概念上设想量子体制中的两种纳米电子学,即“量子波电子学”和“单电子学”。这里特别强调单电子学,因为它有很好的前景。主要讨论了化合物半导体单电子器件的发展前景、预期作用和纳米制造问题,以及化合物半导体量子波器件的关键问题。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Status and key issues for compound semiconductor nanoelectronics
Recent progress of the "nanofabrication" technology has opened up exciting possibilities of constructing novel quantum nanoelectronics directly based on the quantum mechanics where wave-particle motions of individual electrons are controlled by artificial quantum structures such as quantum wells, quantum wires, quantum dots and single and multiple tunneling barriers so as to realize devices with new functions and higher performances. This paper discusses the present status and key issues of research on the compound semiconductor quantum nanoelectronics, introducing recent results obtained by author's group at Research Center for Interface Quantum Electronics (RCIQE) as specific examples. Since electrons manifest predominantly either wave-nature or particle-nature depending on their environments, one can conceptually envisage two kinds of nanoelectronics in the quantum regime, i.e., "quantum wave electronics" and "single electronics". A particular emphasis is paid here on single electronics because of its promising prospects. Main topics include prospects, expected roles and nano-fabrication issues of compound semiconductor single electron devices as well as key issues on compound semiconductor quantum wave devices.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信