完全耗尽SOI mosfet的热阻提取

1995 IEEE International SOI Conference Proceedings Pub Date : 1995-10-03 DOI:10.1109/SOI.1995.526469

T. Lee, R. Fox

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引用次数: 6

摘要

本文提出了一种方便直接的方法来提取完全耗尽SOI mosfet的热阻抗。结果与用物理模型计算的热阻结果一致。演示了将热阻抗预处理器应用于仿真器Saber中的电热电路模型以预测热瞬态响应，并提供了测量数据。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Extraction of thermal resistance for fully-depleted SOI MOSFETs

This paper presents a convenient and direct method for extracting thermal impedance for fully-depleted SOI MOSFETs. The results are consistent with thermal resistance calculations using a physical model. Demonstration of the use of a Thermal Impedance Pre-Processor applied to an electrothermal circuit model in the simulator Saber to predict thermal transient response is also provided along with measurement data.

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来源期刊

1995 IEEE International SOI Conference Proceedings

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