电阻开关器件的半经验Memdiode模型

2021 13th Spanish Conference on Electron Devices (CDE) Pub Date : 2021-06-09 DOI:10.1109/CDE52135.2021.9455723

C. Cruz González, B. Sahelices, J. Jiménez, O. G. Ossorio, H. Castán, M. González, G. Vinuesa, S. Dueñas, F. Campabadal, H. García

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引用次数: 0

摘要

提出了一种电阻开关器件的半经验memdiode模型。该模型是准静态memdiode模型(QMM)的改进。它基于QMM参数中时间依赖性的结合，以及经验观察到的重置和设置转换之间的不对称性。该模型大大提高了对电阻开关器件对任意输入刺激响应的预测。

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Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes

A semiempirical memdiode model of resistive switching devices is proposed. This model is a modification of the quasi-static memdiode model (QMM). It is based on the incorporation of time dependencies in the QMM parameters, as well as on the empirically observed asymmetries between the reset and set transition. The model considerably improves the prediction of the response of resistive switching devices to arbitrary input stimuli.

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2021 13th Spanish Conference on Electron Devices (CDE)

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