一种采用双偏置抵消回路的12.5GHz SiGe BICMOS限幅放大器

A. Maxim, D. Antrik
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引用次数: 2

摘要

采用0.2μm 90GHz f/sub T/ SiGe BICMOS工艺实现了12.5GHz的限幅放大器。信号路径采用多个电容峰值网络实现为发射器跟随器级联和差分级联。输出偏置电压通过使用双有源偏置抵消回路降低到mV的分数,由于米勒乘法结构,补偿电容集成在片上。ic规格包括:>60dB信号路径增益,12.5GHz信号路径带宽,1mV输入灵敏度,<25ps上升/下降时间,<15ps确定性抖动,1.5×1.5mm/sup 2/芯片面积和来自3.3V 7±10%电源电压的25mA电流。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Notice of Violation of IEEE Publication PrinciplesA 12.5GHz SiGe BICMOS limiting amplifier using a dual offset cancellation loop
A 12.5GHz limiting amplifier was realized in a 0.2μm 90GHz f/sub T/ SiGe BICMOS process. The signal path was implemented as a cascade of emitter followers and differential stages using multiple capacitive peaking networks. The output offset voltage was reduced to fractions of mV by using a dual active offset cancellation loop having the compensation capacitance integrated on-chip due to a Miller multiplication architecture. ICs specifications include: >60dB signal path gain, <0.2mV output offset voltage, >12.5GHz signal path bandwidth, 1mV input sensitivity, <25ps rise/ fall time, <15ps deterministic jitter, 1.5×1.5mm/sup 2/ die area and 25mA current from a 3.3V 7±10% supply voltage.
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