{"title":"一种采用双偏置抵消回路的12.5GHz SiGe BICMOS限幅放大器","authors":"A. Maxim, D. Antrik","doi":"10.1109/ESSCIR.2005.1541567","DOIUrl":null,"url":null,"abstract":"A 12.5GHz limiting amplifier was realized in a 0.2μm 90GHz f/sub T/ SiGe BICMOS process. The signal path was implemented as a cascade of emitter followers and differential stages using multiple capacitive peaking networks. The output offset voltage was reduced to fractions of mV by using a dual active offset cancellation loop having the compensation capacitance integrated on-chip due to a Miller multiplication architecture. ICs specifications include: >60dB signal path gain, <0.2mV output offset voltage, >12.5GHz signal path bandwidth, 1mV input sensitivity, <25ps rise/ fall time, <15ps deterministic jitter, 1.5×1.5mm/sup 2/ die area and 25mA current from a 3.3V 7±10% supply voltage.","PeriodicalId":239980,"journal":{"name":"Proceedings of the 31st European Solid-State Circuits Conference, 2005. ESSCIRC 2005.","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Notice of Violation of IEEE Publication PrinciplesA 12.5GHz SiGe BICMOS limiting amplifier using a dual offset cancellation loop\",\"authors\":\"A. Maxim, D. Antrik\",\"doi\":\"10.1109/ESSCIR.2005.1541567\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 12.5GHz limiting amplifier was realized in a 0.2μm 90GHz f/sub T/ SiGe BICMOS process. The signal path was implemented as a cascade of emitter followers and differential stages using multiple capacitive peaking networks. The output offset voltage was reduced to fractions of mV by using a dual active offset cancellation loop having the compensation capacitance integrated on-chip due to a Miller multiplication architecture. ICs specifications include: >60dB signal path gain, <0.2mV output offset voltage, >12.5GHz signal path bandwidth, 1mV input sensitivity, <25ps rise/ fall time, <15ps deterministic jitter, 1.5×1.5mm/sup 2/ die area and 25mA current from a 3.3V 7±10% supply voltage.\",\"PeriodicalId\":239980,\"journal\":{\"name\":\"Proceedings of the 31st European Solid-State Circuits Conference, 2005. ESSCIRC 2005.\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-12-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 31st European Solid-State Circuits Conference, 2005. ESSCIRC 2005.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSCIR.2005.1541567\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 31st European Solid-State Circuits Conference, 2005. ESSCIRC 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIR.2005.1541567","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Notice of Violation of IEEE Publication PrinciplesA 12.5GHz SiGe BICMOS limiting amplifier using a dual offset cancellation loop
A 12.5GHz limiting amplifier was realized in a 0.2μm 90GHz f/sub T/ SiGe BICMOS process. The signal path was implemented as a cascade of emitter followers and differential stages using multiple capacitive peaking networks. The output offset voltage was reduced to fractions of mV by using a dual active offset cancellation loop having the compensation capacitance integrated on-chip due to a Miller multiplication architecture. ICs specifications include: >60dB signal path gain, <0.2mV output offset voltage, >12.5GHz signal path bandwidth, 1mV input sensitivity, <25ps rise/ fall time, <15ps deterministic jitter, 1.5×1.5mm/sup 2/ die area and 25mA current from a 3.3V 7±10% supply voltage.