印刷电路板用纯水中铜的电化学迁移

2013 IEEE 19th International Symposium for Design and Technology in Electronic Packaging (SIITME) Pub Date : 2013-10-01 DOI:10.1109/SIITME.2013.6743688

B. Medgyes, B. Illés, D. Rigler, M. Ruszinkó, L. Gál

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引用次数: 6

摘要

研究了纯水中“无氧化”和高度氧化的铜表面的电化学迁移行为。前人的研究表明，铜离子的氧化数主要取决于铜表面氧化层的厚度;在“无氧化”铜表面以Cu1+离子为主，而Cu2+离子主要在铜表面高度氧化的情况下形成，这改变了标准电极电位和铜-氢氧化物的溶解度乘积常数，从而影响ECM引起的平均失效时间(MTTF)。为了验证不同铜离子(Cu1+和Cu2+)对MTTF的影响，在两种铜表面进行了水滴(WD)试验。结果表明，无氧化铜的MTTF值低于高氧化铜的MTTF值。

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Electrochemical migration of copper in pure water used in printed circuit boards

Electrochemical migration (ECM) behaviour investigations were carried out on “oxide-free” and highly oxidized copper surfaces in pure water. It was shown in our previous paper that the oxidation number of copper ion mainly depends on the oxide layer thickness of the copper surface; in the case of “oxide-free” copper surface the Cu1+ ions dominated, while Cu2+ ions were mainly formed in the case of highly oxidized copper surface, which modify the standard electrode potential and also the solubility product constant of copper-hydroxides, thus can effect on the mean time to failure (MTTF) caused by ECM. In order to verify the effect of different copper ions (Cu1+ vs. Cu2+) on MTTF, water drop (WD) tests were carried out on both copper surfaces. The results showed that in the case of “oxide-free” copper the MTTF value was lower than in the case of highly oxidized copper.

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2013 IEEE 19th International Symposium for Design and Technology in Electronic Packaging (SIITME)

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