以非丝状PCMO-RRAM作为神经网络突触的1T1R单元增强双极电导线性

2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI:10.1109/EDTM55494.2023.10103054

J. Sakhuja, Shubham Patil, Sandip Mondal, S. Lashkare, U. Ganguly

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引用次数: 0

摘要

这项工作报告了非丝状PCMO-RRAM在单晶体管-单rram (1T1R)电池中的电导线性增强。首先，我们展示了DC-IV中PCMO-RRAM(1R)的模拟电阻开关。其次，我们证明了瞬态电位的逐渐电导变化(增强(LTP) /降低(LTD))。第三，在商业化晶体管和制造的PCMO-RRAM之间定义的电气连接模拟了1T1R，演示了通过晶体管(1T)的电阻开关。最后，显示了1T1R改善的电导线性$(25X\ in\ LTP/5X\ in\ LTD)$，与最先进的RRAM器件相比最好。

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Enhancement in Bipolar Conductance Linearity by One Transistor - One Resistor (1T1R) cell with Non-Filamentary PCMO-RRAM as Synapse for Neural Networks

This work reports conductance linearity enhancement in one-transistor-one-RRAM (1T1R) cell with non-filamentary PCMO-RRAM. First, we show analog resistive switching of PCMO-RRAM(1R) in DC-IV. Second, we demonstrate gradual conductance change (potentiation (LTP) /depression (LTD)) in transient-IV. Third, an electrical connection defined between a commercialized transistor and fabricated PCMO-RRAM emulates 1T1R, demonstrating resistive switching via transistor(1T). Finally, improved conductance linearity $(25X\ in\ LTP/5X\ in\ LTD)$ with 1T1R is shown, which is best compared with state-of-the-art RRAM devices.

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来源期刊

2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

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