标准CMOS技术中接近1 v操作的带隙参考

Proceedings of the IEEE 2001 Custom Integrated Circuits Conference (Cat. No.01CH37169) Pub Date : 2001-05-06 DOI:10.1109/CICC.2001.929823

A. Pierazzi, A. Boni, C. Morandi

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引用次数: 22

摘要

本文提出了两种新的电流模带隙基准(BGR)的实现，它们支持不久将来CMOS技术的极低电源电压，而不需要借助特殊器件。此外，对低压bgr的启动问题进行了讨论，并提出了一种简单的解决方案，以保证正确的启动过程、电源电压和温度变化。带隙参考以常规的0.35 /spl mu/m实现。并提供约500 mV的输出电压。

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Band-gap references for near 1-V operation in standard CMOS technology

This paper presents two novel implementations of the current-mode band-gap reference (BGR) which support the very low supply voltages of the near future CMOS technologies, without resorting to special devices. Moreover, the problem of the start-up of low-voltage BGRs is discussed and a simple solution which guarantees correct start-up over process, supply voltage and temperature variations is proposed. The band-gap references were implemented in a conventional 0.35 /spl mu/m. CMOS technology and provides an output voltage of about 500 mV.

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Proceedings of the IEEE 2001 Custom Integrated Circuits Conference (Cat. No.01CH37169)

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