J. Xia, Yang Ruixia, Zhao Zhengping, Z. Zhiguo, Feng Zhihong
{"title":"AlGaN/GaN高电子迁移率晶体管的分析模型与仿真","authors":"J. Xia, Yang Ruixia, Zhao Zhengping, Z. Zhiguo, Feng Zhihong","doi":"10.1109/ICICIS.2011.93","DOIUrl":null,"url":null,"abstract":"Based on the charge control theory, a accurate analytical model of I-V characteristics for AlGaN/GaN high electron mobility transistor (HEMT) is presented considering the relationship between self-heating effect and polarization, electron mobility, velocity saturation, conduction band discontinuity, doping concentration, channel temperature. The comparison between simulations and physical calculation shows a good agreement. The model is simple in calculations, suitable for design of microwave device and circuit.","PeriodicalId":255291,"journal":{"name":"2011 International Conference on Internet Computing and Information Services","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Analytical Model and Simulation for AlGaN/GaN High Electron Mobility Transistor\",\"authors\":\"J. Xia, Yang Ruixia, Zhao Zhengping, Z. Zhiguo, Feng Zhihong\",\"doi\":\"10.1109/ICICIS.2011.93\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Based on the charge control theory, a accurate analytical model of I-V characteristics for AlGaN/GaN high electron mobility transistor (HEMT) is presented considering the relationship between self-heating effect and polarization, electron mobility, velocity saturation, conduction band discontinuity, doping concentration, channel temperature. The comparison between simulations and physical calculation shows a good agreement. The model is simple in calculations, suitable for design of microwave device and circuit.\",\"PeriodicalId\":255291,\"journal\":{\"name\":\"2011 International Conference on Internet Computing and Information Services\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-09-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 International Conference on Internet Computing and Information Services\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICICIS.2011.93\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 International Conference on Internet Computing and Information Services","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICICIS.2011.93","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Analytical Model and Simulation for AlGaN/GaN High Electron Mobility Transistor
Based on the charge control theory, a accurate analytical model of I-V characteristics for AlGaN/GaN high electron mobility transistor (HEMT) is presented considering the relationship between self-heating effect and polarization, electron mobility, velocity saturation, conduction band discontinuity, doping concentration, channel temperature. The comparison between simulations and physical calculation shows a good agreement. The model is simple in calculations, suitable for design of microwave device and circuit.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
