一种将湿氧化III-V半导体层纳入磷化铟基激光器和放大器的方法

Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) Pub Date : 1999-05-16 DOI:10.1109/ICIPRM.1999.773771

B. Koley, F. Johnson, S. Saini, M. Dagenais

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引用次数: 0

摘要

我们已经证明了一种有效的湿氧化方法，用于器件制造，使用材料系统晶格匹配的磷化铟。结果表明，在InP上生长的应变补偿InAs/AlAs超晶格的氧化速度比匹配的InAlAs晶格快得多。该方法已用于基于InP的边缘发射条纹激光器的电流约束。同样的湿式氧化工艺也非常适合长波长的VCSEL应用。

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A method of incorporating wet-oxidized III-V semiconductor layers into indium phosphide based lasers and amplifiers

We have demonstrated a method of efficient wet oxidation for use in device fabrication using material system lattice-matched to indium phosphide. It was found that the oxidation of a strain compensated InAs/AlAs super-lattice grown on InP proceeded much faster than lattice matched InAlAs. This method has been used for current confinement in InP based edge emitting stripe lasers. The same wet oxidation process is also well suited for long wavelength VCSEL application.

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Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)

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