在柔性衬底上生长的BaxSr1−xTiO3薄膜的介电可调性

Hua-ping Wu, Bin Xu, Xiaoliang Lu
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引用次数: 1

摘要

利用Ginzburg-Landau-Devonshire理论结合Timosheko弹性理论,从理论上研究了生长在柔性衬底上的BaxSr1−xTiO3 (BST)薄膜的相变温度和介电可调性,考虑了薄膜和衬底的晶格失配应变的厚度依赖性松弛。我们的研究结果表明,沉积在柔性衬底上的BST薄膜的介电特性与它们的体对应物不同。BST薄膜的铁电性能和介电性能可以通过改变薄膜与衬底的厚度比或应力状态来调节。这为微波器件中铁电薄膜的性能优化提供了有效的理论指导。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Dielectric tunability of BaxSr1−xTiO3 thin films grown on a compliant substrate
The phase transition temperature and dielectric tunability of BaxSr1−xTiO3 (BST) thin films grown on a compliant substrate are theoretically investigated using the Ginzburg-Landau-Devonshire theory combined with the Timosheko elastic theory by considering thin films' and substrates' thickness-dependent relaxation of lattice-mismatch strain. Our results indicate that the dielectric characteristics of BST thin films deposited on compliant substrates are different from those of their bulk counterparts. The ferroelectricity and dielectric performances of the BST thin films can be modulated by changing the thickness ratio of the film to substrate or the stress state. This is an effectively theoretical guidance for the property optimization of ferroelectric thin films used in microwave devices.
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