T. Kuo, N. Yang, N. Leong, E. Wang, F. Lai, A. Lee, H. Chen, S. Chandra, Y. Wu, T. Akaogi, A. Melik-Martirosian, A. Pourkeramati, J. Thomas, M. Vanbuskirk
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Design of 90nm 1Gb ORNAND/sup TM/ Flash Memory with MirrorBit/sup TM/ Technology
Using the virtual ground array structure of 2 bits/cell MirrorBittrade technology, a 90nm, 1.8V ORNANDtrade product combining the advantages of both NOR and NAND is presented. Full NAND functionality and performance compatibility is shown, while maintaining the NOR advantages