采用MirrorBit/sup TM/ Technology的90nm 1Gb ORNAND/sup TM/闪存设计

T. Kuo, N. Yang, N. Leong, E. Wang, F. Lai, A. Lee, H. Chen, S. Chandra, Y. Wu, T. Akaogi, A. Melik-Martirosian, A. Pourkeramati, J. Thomas, M. Vanbuskirk
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引用次数: 2

摘要

利用2位/单元mirrorettrade技术的虚拟地面阵列结构,提出了一种结合NOR和NAND优点的90nm、1.8V ORNANDtrade产品。完整的NAND功能和性能兼容性显示,同时保持NOR的优势
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design of 90nm 1Gb ORNAND/sup TM/ Flash Memory with MirrorBit/sup TM/ Technology
Using the virtual ground array structure of 2 bits/cell MirrorBittrade technology, a 90nm, 1.8V ORNANDtrade product combining the advantages of both NOR and NAND is presented. Full NAND functionality and performance compatibility is shown, while maintaining the NOR advantages
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