Al-Cu合金的比较电迁移试验

P. Merchant, T. Cass
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引用次数: 1

摘要

通过几种溅射沉积工艺获得的Al-Cu薄膜进行了加速电迁移寿命试验。用He后向散射光谱、透射电子显微镜、衍射和x射线衍射测量了薄膜的显微组织和合金分布,并对所得的失效中位时间(15-1600 h)进行了比较。我们得出结论,薄膜的结构和铜在薄膜中的位置对其电迁移电阻有很大的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Comparative Electromigration Tests of Al-Cu Alloys
Al-Cu films, obtained from several sputter deposition processes have been subjected to accelerated electromigration life tests. The resultant median times to failure (ranging from 15-1600 h) have been compared with the microstructure and alloy distributions in the films as measured by He backscattering spectroscopy, transmission electron microscopy and diffraction and X-ray diffraction. We conclude that the film texture and location of copper in the films have a strong influence on their electromigration resistance.
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