{"title":"Al-Cu合金的比较电迁移试验","authors":"P. Merchant, T. Cass","doi":"10.1109/IRPS.1984.362056","DOIUrl":null,"url":null,"abstract":"Al-Cu films, obtained from several sputter deposition processes have been subjected to accelerated electromigration life tests. The resultant median times to failure (ranging from 15-1600 h) have been compared with the microstructure and alloy distributions in the films as measured by He backscattering spectroscopy, transmission electron microscopy and diffraction and X-ray diffraction. We conclude that the film texture and location of copper in the films have a strong influence on their electromigration resistance.","PeriodicalId":326004,"journal":{"name":"22nd International Reliability Physics Symposium","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1984-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Comparative Electromigration Tests of Al-Cu Alloys\",\"authors\":\"P. Merchant, T. Cass\",\"doi\":\"10.1109/IRPS.1984.362056\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Al-Cu films, obtained from several sputter deposition processes have been subjected to accelerated electromigration life tests. The resultant median times to failure (ranging from 15-1600 h) have been compared with the microstructure and alloy distributions in the films as measured by He backscattering spectroscopy, transmission electron microscopy and diffraction and X-ray diffraction. We conclude that the film texture and location of copper in the films have a strong influence on their electromigration resistance.\",\"PeriodicalId\":326004,\"journal\":{\"name\":\"22nd International Reliability Physics Symposium\",\"volume\":\"32 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1984-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"22nd International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.1984.362056\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"22nd International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.1984.362056","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Comparative Electromigration Tests of Al-Cu Alloys
Al-Cu films, obtained from several sputter deposition processes have been subjected to accelerated electromigration life tests. The resultant median times to failure (ranging from 15-1600 h) have been compared with the microstructure and alloy distributions in the films as measured by He backscattering spectroscopy, transmission electron microscopy and diffraction and X-ray diffraction. We conclude that the film texture and location of copper in the films have a strong influence on their electromigration resistance.