S. Crémer, C. Baudot, N. Vulliet, J. Durel, C. Durand, H. Petiton, E. Temporiti, F. Boeuf
{"title":"迈向下一代硅光子学","authors":"S. Crémer, C. Baudot, N. Vulliet, J. Durel, C. Durand, H. Petiton, E. Temporiti, F. Boeuf","doi":"10.1109/CSICS.2016.7751074","DOIUrl":null,"url":null,"abstract":"Process flow and device performances of an industrial 300mm Silicon Photonics platform demonstrating 25Gb/s per data lane when associated with 55nm BICMOS are presented. Advanced designs targeting 56Gb/s and using this platform are introduced. Device improvements suitable to convert such demonstrators into products are shown. Backside reflector, 40Ghz photodiode as well as WDM capability are presented as some potential process and device evolutions for future Silicon Photonics platforms. Finally laser integration challenges and opportunities are discussed.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"76 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Towards Next Generations of Silicon Photonics\",\"authors\":\"S. Crémer, C. Baudot, N. Vulliet, J. Durel, C. Durand, H. Petiton, E. Temporiti, F. Boeuf\",\"doi\":\"10.1109/CSICS.2016.7751074\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Process flow and device performances of an industrial 300mm Silicon Photonics platform demonstrating 25Gb/s per data lane when associated with 55nm BICMOS are presented. Advanced designs targeting 56Gb/s and using this platform are introduced. Device improvements suitable to convert such demonstrators into products are shown. Backside reflector, 40Ghz photodiode as well as WDM capability are presented as some potential process and device evolutions for future Silicon Photonics platforms. Finally laser integration challenges and opportunities are discussed.\",\"PeriodicalId\":183218,\"journal\":{\"name\":\"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"volume\":\"76 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSICS.2016.7751074\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2016.7751074","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Process flow and device performances of an industrial 300mm Silicon Photonics platform demonstrating 25Gb/s per data lane when associated with 55nm BICMOS are presented. Advanced designs targeting 56Gb/s and using this platform are introduced. Device improvements suitable to convert such demonstrators into products are shown. Backside reflector, 40Ghz photodiode as well as WDM capability are presented as some potential process and device evolutions for future Silicon Photonics platforms. Finally laser integration challenges and opportunities are discussed.