{"title":"基于超薄硅化铱硅层的肖特基矩阵在太阳能电池中的应用","authors":"E.А. Кеrimov, H. S. Aliyev","doi":"10.20431/2349-4050.0703004","DOIUrl":null,"url":null,"abstract":"The parameters of receivers operating in the infrared region based on multielement Schottky diodes depend not only on the characteristics of the sensitive element, but also on the operating mode of the matrices. An increase in the quantum efficiency of Schottky diodes in the operating wavelength range can be achieved by increasing the long-wavelength border of the photosensitivity, which in turn is determined by the height of the Schottky barrier (SB):","PeriodicalId":286316,"journal":{"name":"International Journal of Innovative Research in Electronics and Communications","volume":"313 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Schottky- Matrices Based on Ultra-Thin Layers of Iridium Silicide - Silicon Used in Solar Cells\",\"authors\":\"E.А. Кеrimov, H. S. Aliyev\",\"doi\":\"10.20431/2349-4050.0703004\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The parameters of receivers operating in the infrared region based on multielement Schottky diodes depend not only on the characteristics of the sensitive element, but also on the operating mode of the matrices. An increase in the quantum efficiency of Schottky diodes in the operating wavelength range can be achieved by increasing the long-wavelength border of the photosensitivity, which in turn is determined by the height of the Schottky barrier (SB):\",\"PeriodicalId\":286316,\"journal\":{\"name\":\"International Journal of Innovative Research in Electronics and Communications\",\"volume\":\"313 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Journal of Innovative Research in Electronics and Communications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.20431/2349-4050.0703004\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Innovative Research in Electronics and Communications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.20431/2349-4050.0703004","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Schottky- Matrices Based on Ultra-Thin Layers of Iridium Silicide - Silicon Used in Solar Cells
The parameters of receivers operating in the infrared region based on multielement Schottky diodes depend not only on the characteristics of the sensitive element, but also on the operating mode of the matrices. An increase in the quantum efficiency of Schottky diodes in the operating wavelength range can be achieved by increasing the long-wavelength border of the photosensitivity, which in turn is determined by the height of the Schottky barrier (SB):
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