氢化非晶硅多层波导中电致折射率变化的表征

8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI:10.1109/GROUP4.2011.6053797

S. Rao, G. Coppola, M. Gioffré, C. Summonte, F. D. Della Corte

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引用次数: 1

摘要

本文首次在波导集成Fabry-Perot (FP)谐振腔中对电诱导相位调制进行了表征，该谐振腔基于折射率和导电性高对比度非晶硅/非晶碳化硅(a- si:H/a- sic:H)多层堆叠。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Characterization of an electrically induced refractive index change in a hydrogenated amorphous silicon multistack waveguide

Electrically induced phase modulation is characterized for the first time in a waveguide-integrated Fabry-Perot (FP) resonating cavity based both on an index- and conductivity high-contrast amorphous silicon/amorphous silicon carbide (a-Si:H/a-SiC:H) multistack.

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8th IEEE International Conference on Group IV Photonics

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