230 GHz自对准SiGeC HBT，用于90纳米BiCMOS技术

Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting Pub Date : 2004-12-13 DOI:10.1109/BIPOL.2004.1365786

Pascal Chevalier, C. Fellous, L. Rubaldo, Didier Dutartre, M. Laurens, T. Jagueneau, François Leverd, S. Bord, C. Richard, D. Lenoble, J. Bonnouvrier, M. Marty, A. Perrotin, Daniel Gloria, F. Saguin, B. Barbalat, R. Beerkens, N. Zerounian, F. Aniel, A. Chantre

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引用次数: 33

摘要

本文介绍了一种230 GHz自对准SiGeC HBT，具有选择性外延基底和掺砷单晶发射极。针对BiCMOS的性能目标和集成约束，提出并讨论了这些技术选择。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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230 GHz self-aligned SiGeC HBT for 90 nm BiCMOS technology

This paper describes a 230 GHz self-aligned SiGeC HBT featuring a selective epitaxial base and an arsenic-doped monocrystalline emitter. These technical choices are presented and discussed with respect to BiCMOS performance objectives and integration constraints.

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Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting

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