100纳米方形单晶硅剪切应变计

Proceedings of 2002 International Symposium on Micromechatronics and Human Science Pub Date : 2002-12-10 DOI:10.1109/MHS.2002.1058039

T. Toriyama, S. Sugiyama

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引用次数: 0

摘要

介绍了a /spl sim/100 nm方形p型单晶硅四端剪切应变片(Si FSSG)的制备及其特性。为了验证纳米级硅FSSG的抗剪切压性能，对其进行了测试。在表面杂质浓度Ns=9/spl times/10/sup 19/ cm/sup -3/时，剪切抗压系数/spl pi//sub 44/为77.4/spl times/10/sup -11/ Pa/sup -1/。该值比传统机械传感器使用的p/sup +/扩散压敏电阻获得的值大54.8%。结果表明，硅FSSG在纳米机械传感器中具有良好的应用前景。

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100 nm square single crystal silicon shear strain gauge

Fabrication and characteristics of a /spl sim/100 nm square p-type single crystal silicon four-terminal shear strain gauge (Si FSSG) were described. The shear piezoresistance was measured in order to verify the ability of nano metric scale Si FSSG. The shear piezoresistance coefficient /spl pi//sub 44/ was found to be 77.4/spl times/10/sup -11/ Pa/sup -1/ at surface impurity concentration Ns=9/spl times/10/sup 19/ cm/sup -3/. This value was 54.8% larger than the value obtained from p/sup +/ diffused piezoresistor used for the conventional mechanical sensors. A good prospect for the application of Si FSSG to the nano metric mechanical sensors was obtained.

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Proceedings of 2002 International Symposium on Micromechatronics and Human Science

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