B. Ducarouge, D. Dubuc, S. Mellé, L. Bary, P. Pons, R. Plana
{"title":"基于聚合物的射频MEMS开关的高效设计方法","authors":"B. Ducarouge, D. Dubuc, S. Mellé, L. Bary, P. Pons, R. Plana","doi":"10.1109/SMIC.2004.1398228","DOIUrl":null,"url":null,"abstract":"We present a capacitive shunt switch topology related to a simple, fast and efficient design methodology. The proposed switch has been realized and measurements exhibit isolation better than -23 dB and losses less than 0.25 dB at 24 GHz for a pull down voltage of 22 V. In order to design and optimize more complex passive circuits, we have defined a scalable equivalent electrical model from electromagnetic simulations that allows a very fast optimization of the microwave performance. The RF power capability related to the electromigration effect of this structure has been also investigated and a maximum power handling of 10 W has been demonstrated.","PeriodicalId":288561,"journal":{"name":"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"Efficient design methodology of polymer based RF MEMS switches\",\"authors\":\"B. Ducarouge, D. Dubuc, S. Mellé, L. Bary, P. Pons, R. Plana\",\"doi\":\"10.1109/SMIC.2004.1398228\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present a capacitive shunt switch topology related to a simple, fast and efficient design methodology. The proposed switch has been realized and measurements exhibit isolation better than -23 dB and losses less than 0.25 dB at 24 GHz for a pull down voltage of 22 V. In order to design and optimize more complex passive circuits, we have defined a scalable equivalent electrical model from electromagnetic simulations that allows a very fast optimization of the microwave performance. The RF power capability related to the electromigration effect of this structure has been also investigated and a maximum power handling of 10 W has been demonstrated.\",\"PeriodicalId\":288561,\"journal\":{\"name\":\"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.\",\"volume\":\"35 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-09-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMIC.2004.1398228\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMIC.2004.1398228","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Efficient design methodology of polymer based RF MEMS switches
We present a capacitive shunt switch topology related to a simple, fast and efficient design methodology. The proposed switch has been realized and measurements exhibit isolation better than -23 dB and losses less than 0.25 dB at 24 GHz for a pull down voltage of 22 V. In order to design and optimize more complex passive circuits, we have defined a scalable equivalent electrical model from electromagnetic simulations that allows a very fast optimization of the microwave performance. The RF power capability related to the electromigration effect of this structure has been also investigated and a maximum power handling of 10 W has been demonstrated.