{"title":"基于标准CMOS弛豫振荡器的超低功耗温度传感器","authors":"Wendi Yang, Hanjun Jiang, Zhihua Wang, Wen Jia","doi":"10.1109/EDSSC.2018.8487078","DOIUrl":null,"url":null,"abstract":"This work presents an ultra-low power CMOS temperature sensor in $0.13\\mu \\mathrm {m}$ standard CMOS process with an area of 0.0014mm2 and a power consumption of $0.15\\mu \\mathrm {W}$. CMOS transistors operating in subthreshold region generate the PTAT current, and a relaxation oscillator converts the current into frequency, which is digitalized by a following counter. The obtained oscillation frequency is nearly linear to the temperature, and a two-point calibration is applied to reduce the temperature spread in the range −0.27°C to 0.36°C.","PeriodicalId":279745,"journal":{"name":"2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC)","volume":"151 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"An Ultra-Low Power Temperature Sensor Based on Relaxation Oscillator in Standard CMOS\",\"authors\":\"Wendi Yang, Hanjun Jiang, Zhihua Wang, Wen Jia\",\"doi\":\"10.1109/EDSSC.2018.8487078\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work presents an ultra-low power CMOS temperature sensor in $0.13\\\\mu \\\\mathrm {m}$ standard CMOS process with an area of 0.0014mm2 and a power consumption of $0.15\\\\mu \\\\mathrm {W}$. CMOS transistors operating in subthreshold region generate the PTAT current, and a relaxation oscillator converts the current into frequency, which is digitalized by a following counter. The obtained oscillation frequency is nearly linear to the temperature, and a two-point calibration is applied to reduce the temperature spread in the range −0.27°C to 0.36°C.\",\"PeriodicalId\":279745,\"journal\":{\"name\":\"2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC)\",\"volume\":\"151 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-06-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDSSC.2018.8487078\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2018.8487078","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An Ultra-Low Power Temperature Sensor Based on Relaxation Oscillator in Standard CMOS
This work presents an ultra-low power CMOS temperature sensor in $0.13\mu \mathrm {m}$ standard CMOS process with an area of 0.0014mm2 and a power consumption of $0.15\mu \mathrm {W}$. CMOS transistors operating in subthreshold region generate the PTAT current, and a relaxation oscillator converts the current into frequency, which is digitalized by a following counter. The obtained oscillation frequency is nearly linear to the temperature, and a two-point calibration is applied to reduce the temperature spread in the range −0.27°C to 0.36°C.