名义纯和稀土离子掺杂LiCaAIF6单晶作为157 nm光刻材料的VUV光谱研究

A. Cefalas, E. Sarantopoulou, Z. Kollia, R. Abdulsabirov, S. Korableva, A. Naumov, V. Semashko, S. Kobe, P. Mcguiness
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引用次数: 1

摘要

最近研究发现,在157nm的激光照射下,CaF2晶体会产生双折射。考虑到CaF2是目前157nm光刻中唯一使用的光学材料,应该考虑使用新的宽带隙氟化物晶体作为157nm光刻的光学元件的可能性,即使是非立方对称的。此外,掺有三价稀土离子的宽带隙氟化物介电晶体可作为VUV中的被动或主动光学元件。对于掺杂晶体,应用取决于4fn-15d电子构型的能级模式结构和RE离子浓度。在这项工作中,我们正在探索使用掺稀土离子的宽禁带氟化物介电晶体。研究了157 nm处的激光诱导荧光光谱,以及纯稀土离子和掺杂稀土离子的LiCaAlF6晶体的紫外吸收光谱。提出了一种基于振动样品磁强计测量的宽禁带氟化物晶体中稀土浓度监测新方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
VUV spectroscopy of nominally pure and rare-earth ions doped LiCaAIF6 single crystals as promising materials for 157 nm photolithography
Recently it was found that birefringence is induced in CaF2 crystals when they are illuminated with laser light at 157 nm. Taking into consideration that CaF2 is the only optical material used in 157 nm photolithography today, the possibility to use new wide band gap fluoride crystals as optical elements for 157 nm photolithography, even those of non-cubic symmetry, should be considered. Additionally fluoride dielectric crystals with wide band gaps doped with trivalent rare-earth (RE) ions can be used as passive or active optical elements int eh VUV. For doped crystals, applications depend on the structure of the energy level pattern of the 4fn-15d electronic configuration and RE ion concentration. In this work we are exploiting the use of wide band gap fluoride dielectric crystals doped with RE ions. The laser induced fluorescence spectrum at 157 nm, and the absorption spectra of the LiCaAlF6 crystals, pure and doped with RE ions, were investigated in the VUV region of the spectrum. A new m4tehod for monitoring RE concentration in wide band gap fluoride crystals, that is based on vibrating sample magnetometer measurement is presented as well.
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