高压mosfet重叠区的二维偏置控制建模，以实现精确的器件/电路性能预测

2010 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2010-10-14 DOI:10.1109/SISPAD.2010.5604515

A. Tanaka, Y. Oritsuki, H. Kikuchihara, M. Miyake, H. Mattausch, M. Miura-Mattausch, Y. Liu, K. Green

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引用次数: 4

摘要

高压mosfet仅通过优化器件结构才能实现宽偏置范围应用。基于器件中的电位分布，我们开发了紧凑的HiSIM_HV 2.0.0模型，该模型对器件和电路的优化都很有用。通过考虑两个器件结构相关的电势，即高阻漂移区域内的内部节点电势和栅极重叠区域下方的电势，该模型可以再现大范围结构变化的I-V特性，而无需额外的拟合参数。

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Modeling of 2D bias control in overlap region of high-voltage MOSFETs for accurate device/circuit performance prediction

High-voltage MOSFETs enable wide biasrange applications realized only by optimizing the device structure. We have developed the compact model HiSIM_HV 2.0.0, based on the potential distribution in the device, which is useful for both device and circuit optimizations. By considering two device-structure dependent potentials, the internal node potential within the high resistive drift region and the potential underneath the gate overlap region, the model can reproduce I–V characteristics for a wide range of structure variations without additional fitting parameters.

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2010 International Conference on Simulation of Semiconductor Processes and Devices

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