CMOS无电感共门低噪声放大器设计的新方法

Antonio D. Martínez-Pérez, P. Martínez, G. Royo, F. Aznar, S. Celma
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引用次数: 2

摘要

这项工作提出了一种新的方法来设计一个简单有效的LNA,在1.2V 65nm标准CMOS技术中达到非常有竞争力的结果。本设计采用跨导增强技术,在5ghz频段实现2.3 dB的噪声系数。本文揭示了减少电路中器件数量的优点,并对其拓扑结构进行了分析。为了得到更精确的结果,给出了完整的技术模型和统计分析的仿真。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A New Approach to the Design of CMOS Inductorless Common-gate Low-noise Amplifiers
This work proposes a new approach to design a simple and effective LNA reaching very competitive results in 1.2V 65-nm standard CMOS technology. The proposed design uses a transconductance enhancement technique to achieve 2.3 dB of noise figure at the 5 GHz band. The paper exposes the advantages of a reduced number of devices in the circuit and analyses the topology. Simulations with complete technology models and statistical analysis are presented for more precise results.
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