Antonio D. Martínez-Pérez, P. Martínez, G. Royo, F. Aznar, S. Celma
{"title":"CMOS无电感共门低噪声放大器设计的新方法","authors":"Antonio D. Martínez-Pérez, P. Martínez, G. Royo, F. Aznar, S. Celma","doi":"10.1109/ECCTD49232.2020.9218334","DOIUrl":null,"url":null,"abstract":"This work proposes a new approach to design a simple and effective LNA reaching very competitive results in 1.2V 65-nm standard CMOS technology. The proposed design uses a transconductance enhancement technique to achieve 2.3 dB of noise figure at the 5 GHz band. The paper exposes the advantages of a reduced number of devices in the circuit and analyses the topology. Simulations with complete technology models and statistical analysis are presented for more precise results.","PeriodicalId":336302,"journal":{"name":"2020 European Conference on Circuit Theory and Design (ECCTD)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A New Approach to the Design of CMOS Inductorless Common-gate Low-noise Amplifiers\",\"authors\":\"Antonio D. Martínez-Pérez, P. Martínez, G. Royo, F. Aznar, S. Celma\",\"doi\":\"10.1109/ECCTD49232.2020.9218334\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work proposes a new approach to design a simple and effective LNA reaching very competitive results in 1.2V 65-nm standard CMOS technology. The proposed design uses a transconductance enhancement technique to achieve 2.3 dB of noise figure at the 5 GHz band. The paper exposes the advantages of a reduced number of devices in the circuit and analyses the topology. Simulations with complete technology models and statistical analysis are presented for more precise results.\",\"PeriodicalId\":336302,\"journal\":{\"name\":\"2020 European Conference on Circuit Theory and Design (ECCTD)\",\"volume\":\"53 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 European Conference on Circuit Theory and Design (ECCTD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ECCTD49232.2020.9218334\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 European Conference on Circuit Theory and Design (ECCTD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECCTD49232.2020.9218334","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A New Approach to the Design of CMOS Inductorless Common-gate Low-noise Amplifiers
This work proposes a new approach to design a simple and effective LNA reaching very competitive results in 1.2V 65-nm standard CMOS technology. The proposed design uses a transconductance enhancement technique to achieve 2.3 dB of noise figure at the 5 GHz band. The paper exposes the advantages of a reduced number of devices in the circuit and analyses the topology. Simulations with complete technology models and statistical analysis are presented for more precise results.