500v n沟道igbt的电池优化

Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics Pub Date : 1994-05-31 DOI:10.1109/ISPSD.1994.583652

V. Parthasarathy, K. So, Z. Shen, T. Chow

{"title":"500v n沟道igbt的电池优化","authors":"V. Parthasarathy, K. So, Z. Shen, T. Chow","doi":"10.1109/ISPSD.1994.583652","DOIUrl":null,"url":null,"abstract":"The impact of cell design on the safe operating area (SOA) of n-channel IGBTs is assessed. It is shown that the atomic layer lattice (ALL) cell geometry is important for improving the latchup dominated SOA of 500 V n-channel IGBTs. Experimental results for the latchup performance of n-channel ALL cell IGBTs, presented for the first time, show that even at a temperature of 200/spl deg/C these devices do not latch at all but are instead current limited. The experimental measurements and tradeoffs for the different cell geometries have been found to corroborate the trends in the numerical simulations.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Cell optimization for 500 V n-channel IGBTs\",\"authors\":\"V. Parthasarathy, K. So, Z. Shen, T. Chow\",\"doi\":\"10.1109/ISPSD.1994.583652\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The impact of cell design on the safe operating area (SOA) of n-channel IGBTs is assessed. It is shown that the atomic layer lattice (ALL) cell geometry is important for improving the latchup dominated SOA of 500 V n-channel IGBTs. Experimental results for the latchup performance of n-channel ALL cell IGBTs, presented for the first time, show that even at a temperature of 200/spl deg/C these devices do not latch at all but are instead current limited. The experimental measurements and tradeoffs for the different cell geometries have been found to corroborate the trends in the numerical simulations.\",\"PeriodicalId\":405897,\"journal\":{\"name\":\"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-05-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.1994.583652\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1994.583652","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

评估了小区设计对n信道igbt安全工作区域(SOA)的影响。研究结果表明，原子层晶格(ALL)电池的几何形状对提高500v n通道igbt的闭锁主导SOA具有重要意义。首次提出的n通道全单元igbt锁存性能的实验结果表明，即使在200/spl度/C的温度下，这些器件也不会锁存，而是受到电流限制。实验测量和对不同细胞几何形状的权衡已经证实了数值模拟的趋势。

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Cell optimization for 500 V n-channel IGBTs

The impact of cell design on the safe operating area (SOA) of n-channel IGBTs is assessed. It is shown that the atomic layer lattice (ALL) cell geometry is important for improving the latchup dominated SOA of 500 V n-channel IGBTs. Experimental results for the latchup performance of n-channel ALL cell IGBTs, presented for the first time, show that even at a temperature of 200/spl deg/C these devices do not latch at all but are instead current limited. The experimental measurements and tradeoffs for the different cell geometries have been found to corroborate the trends in the numerical simulations.

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Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics

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