一个55 ns 0.35 /spl mu/m 5 V-only 16 m闪存，深度掉电

1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC Pub Date : 1996-02-08 DOI:10.1109/ISSCC.1996.488507

B. Venkatesh, M. Chung, S. Govindachar, V. Santurkar, C. Bill, R. Gutala, D. Zhou, J. Yu, M. Van Buskirk, S. Kawamura, K. Kurihara, H. Kawashima, H. Watanabe

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引用次数: 7

摘要

嵌入式5v仅16m闪存具有片上状态机，该状态机可生成嵌入式程序和擦除算法，从而消除系统执行这些操作。系统发出一系列由状态机解码的命令，以便在片上执行。它是一个/spl乘以/8的部件，带有一个读/忙引脚，用于指示系统该部件是否处于嵌入式模式，以及一个RESETB引脚，用于终止状态机正在执行的任何操作并将该部件重置为读模式。擦除是通过对阵列的控制门施加负电压和对扇区阵列源施加正电压来实现的。

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A 55 ns 0.35 /spl mu/m 5 V-only 16 M flash memory with deep-power-down

An embedded 5 V only 16 M flash memory has an on-chip state machine that generates embedded program and erase algorithms, eliminating system execution of these operations. The system issues a series of commands decoded by the state machine for on-chip execution. It is a /spl times/8 part with a read/busy pin to indicate to the system if the part is in an embedded mode, and a RESETB pin to terminate any operation being executed by the state machine and reset the part to the read mode. Erase is by applying a negative voltage to the control gate of the array and a positive voltage VS to the sector array source.

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来源期刊

1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC

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