工作函数设计的beol兼容IGZO非挥发性MFMIS效应及其与挥发性效应的协整

2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) Pub Date : 2023-06-11 DOI:10.23919/VLSITechnologyandCir57934.2023.10185355

Zijie Zheng, Leming Jiao, Zuopu Zhou, Yuxuan Wang, Long Liu, Kaizhen Han, Chen Sun, Qiwen Kong, Dong Zhang, Xiaolin Wang, Kai Ni, Xiao-Qing Gong

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引用次数: 0

摘要

采用替代浮栅(FG)，首次实现了具有金属-金属-金属-绝缘体-半导体(MFMIS)结构的非易失性反铁电场效应管(nvafefet)，具有超过$2 \ × 10 ^{9}$周期的超高续航能力。通道长度LCH为41 nm的器件实现了1.8 V的存储窗口。通过全面了解具有各种金属Al, Pd和Pt的功函数(WF)工程NV-AFe电容器，包括对其温度依赖特性的首次研究，这些都成为可能。通过协积分突触(nvafefet)和神经元(挥发性afefet)使用相同的设备架构来实现硬件实现的神经形态计算，进一步突出了我们的nv - afefet和WF工程的前景。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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First Demonstration of Work Function-Engineered BEOL-Compatible IGZO Non-Volatile MFMIS AFeFETs and Their Co-Integration with Volatile-AFeFETs

For the first time, non-volatile antiferroelectric FETs (NVAFeFETs) with a metal-AFe-metal-insulator-semiconductor (MFMIS) structure are realized employing a replaced floating gate (FG), showing ultrahigh endurance over $2 \times 10 ^{9}$ cycles. A device with channel length LCH of 41 nm achieves a memory window of 1.8 V. These are made possible through a comprehensive understanding of work function (WF)-engineered NV-AFe capacitors having various metals of Al, Pd, and Pt, including the first study of their temperature-dependent characteristics. The promise of our NV-AFeFETs and WF engineering is further highlighted by co-integrating synapses (NVAFeFETs) and neurons (volatile-AFeFETs) using the same device architecture to enable hardware-implemented neuromorphic computing.

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来源期刊

2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)

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