高密度电力电子直接冷却电压阻断技术的性能验证

A. Iradukunda, D. Huitink, T. Gebrael, N. Miljkovic
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引用次数: 0

摘要

探讨了氢氟醚型流体的电压屏蔽能力,特别是HFE7500,以及基于聚对二甲苯的保形表面涂层的屏蔽能力。两种电压阻断技术都显示出即使暴露在高达16.8kV/mm的介电流体和33.5 kV/mm的2μm厚的聚对二甲苯层的场强下,也能保持良好的电压阻断能力。本研究还探讨了HFE7500与化学气相沉积(CVD)制备的聚对二甲苯薄涂层的联合电压屏蔽能力。对涂有10μm涂层的点-点电极进行击穿测试,结果表明,与裸电极相比,击穿电压降低。这可能归因于几个因素,包括涂层的电离,在电场强度降低时引发击穿。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Performance Validation of Voltage Blocking Technologies for Direct Cooling of High-Density Power Electronics
The voltage shielding capacity of a hydrofluoroether type fluid, specifically HFE7500 along with that of Parylene C based conformal surface coatings are explored. Both voltage blocking technologies demonstrated an ability to maintain good voltage blocking capacity even when exposed to field strengths as high as 16.8kV/mm in the case of the dielectric fluid and 33.5 kV/mm for 2μm-thick layers of Parylene C. To potentially improve voltage blocking characteristics while minimizing thermal resistance, this study also explores the combined voltage shielding capacity of HFE7500 coupled with thin Parylene C coatings deposited via chemical vapor deposition (CVD). Breakdown tests on point-point electrodes coated with a 10μm film of this coating returned results that showed diminished breakdown voltage compared to bare electrodes. This may be attributed to several factors including the ionization of the coating that initiates breakdown at a reduced field strength.
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