超薄体PECVD Ge TFT低压闪存单元,具有高k介电体,用于三维集成

Jaegoo Lee, J. Cha, T. Naoi, D. Muller, R. V. van Dover, J. Shaw, E. Kan
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引用次数: 1

摘要

随着传统体硅闪存单元的缩放接近其基本极限,必须考虑创新的3D堆叠和新材料。Ge是一个很有前途的候选者,因为它具有吸引人的特性,包括更高的迁移率[1],更小的带隙用于电源电压缩放,以及更低的加工温度以兼容高k介电[2]和3D堆叠技术。因此,研究Ge UTB(超薄体)结构对于理解其作为可行解决方案的前景至关重要。然而,与硅不同的是,缺乏足够稳定的天然氧化物阻碍了锗表面的钝化。天然氧化锗具有吸湿性和水溶性。20世纪90年代初,已经报道了几种具有厚EOT的栅极介电材料。为了解决原生氧化锗的问题,Al2O3已成为最有前途的用于Ge MOSFET和TFT[5]的高k栅极介质之一。在这项研究中,我们展示了具有Al2O3高k隧道介质,金属nc和(Ti,Dy)xOy控制介质的可堆叠Ge TFT闪存电池的材料和电气特性。我们提出的平面薄膜工艺是一种简单的批量工艺,因此可以在相对较小的成本增加下使用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Ultra-thin-body PECVD Ge TFT low-voltage flash memory cell with high-k dielectrics for three-dimensional integration
As the scaling of conventional bulk Si flash memory cells approaches its fundamental limits, innovative 3D stacking and new materials must be considered. Ge is one of the promising candidates due to its attractive properties including higher mobility [1], smaller bandgap for supply voltage scaling, and lower processing temperature for compatibility with high-k dielectric [2] and 3D stack technology. Hence, a study the Ge UTB (ultra thin body) structure is pertinent for understanding its prospect as a viable solution [3]. Unlike silicon, however, the lack of a sufficiently stable native oxide hinders the passivation of Ge surfaces. The native germanium oxide is hygroscopic and water-soluble. Several gate dielectric materials with thick EOT on Ge have been reported [4] in early 1990s. Al2O3 has emerged as one of the most promising high-k gate dielectrics for Ge MOSFET and TFT [5] to cope with the issue of the native Ge oxide [6]. In this study, we demonstrate the material and electrical characteristics of stackable Ge TFT flash memory cell with Al2O3 high-k tunnel dielectric, metal NCs and (Ti,Dy)xOy control dielectric. Our proposed planar thin-film process is a simple batch process, and can therefore be used with relatively small cost increase.
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