新型无体串扰的三维堆叠NAND闪存串

2010 IEEE International Memory Workshop Pub Date : 2010-05-16 DOI:10.1109/IMW.2010.5488410

M. Jeong, Joo-Wan Lee, I. Cho, Byung-Gook Park, Hyungcheol Shin, Jang-Sik Lee

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引用次数: 2

摘要

我们研究了所提出的具有通用栅极结构和屏蔽层的三维堆叠NAND闪存串的ID-VGS特性。身体的串音问题完全消除了。我们认为所提出的结构及其改进将是未来高密度NAND闪存的一个很有前途的候选。

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Novel 3-D stacked NAND flash string without body cross-talk effect

We have investigated ID-VGS characteristic of proposed 3-D stacked NAND flash string with common gate structure and a shield layer. The body cross-talk problem was eliminated completely. We think proposed structure and its modification will be very promising candidate for future high density NAND flash memory.

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2010 IEEE International Memory Workshop

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