{"title":"TTA-K作为抑制剂对CU/RU/TAN结构的图像化晶圆CMP的影响","authors":"Yuan Tian, Chenwei Wang, Jianwei Zhou, Chen-cong Xu, Xue Zhang, Chao Wang","doi":"10.1109/CSTIC52283.2021.9461442","DOIUrl":null,"url":null,"abstract":"The inhibitor added into the slurry during copper/barrier chemical mechanical planarization (CMP) plays a vital role in controlling the dishing and erosion of the patterned wafer. In this paper, a kind of corrosion inhibitor TTA-K was introduced in H2O2 based alkaline slurry. The experimental results showed that the addition of TTA-K can effectively reduce the removal rate (RR) and static etch rate (SER) of Cu. The results revealed that with the increase of TTA-K concentration, the passivation effect was enhanced. The dishing and erosion test results showed that the TTA - K can effectively reduce the depth of dishing and erosion with different line widths and spaces. Electrochemistry, XPS and SEM measurement was implemented to characterize the mechanism of TTA-K passivation.","PeriodicalId":186529,"journal":{"name":"2021 China Semiconductor Technology International Conference (CSTIC)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of TTA-K as Inhibitor On CU/RU/TAN Structure based Patterned Wafer CMP\",\"authors\":\"Yuan Tian, Chenwei Wang, Jianwei Zhou, Chen-cong Xu, Xue Zhang, Chao Wang\",\"doi\":\"10.1109/CSTIC52283.2021.9461442\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The inhibitor added into the slurry during copper/barrier chemical mechanical planarization (CMP) plays a vital role in controlling the dishing and erosion of the patterned wafer. In this paper, a kind of corrosion inhibitor TTA-K was introduced in H2O2 based alkaline slurry. The experimental results showed that the addition of TTA-K can effectively reduce the removal rate (RR) and static etch rate (SER) of Cu. The results revealed that with the increase of TTA-K concentration, the passivation effect was enhanced. The dishing and erosion test results showed that the TTA - K can effectively reduce the depth of dishing and erosion with different line widths and spaces. Electrochemistry, XPS and SEM measurement was implemented to characterize the mechanism of TTA-K passivation.\",\"PeriodicalId\":186529,\"journal\":{\"name\":\"2021 China Semiconductor Technology International Conference (CSTIC)\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-03-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 China Semiconductor Technology International Conference (CSTIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSTIC52283.2021.9461442\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 China Semiconductor Technology International Conference (CSTIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSTIC52283.2021.9461442","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effect of TTA-K as Inhibitor On CU/RU/TAN Structure based Patterned Wafer CMP
The inhibitor added into the slurry during copper/barrier chemical mechanical planarization (CMP) plays a vital role in controlling the dishing and erosion of the patterned wafer. In this paper, a kind of corrosion inhibitor TTA-K was introduced in H2O2 based alkaline slurry. The experimental results showed that the addition of TTA-K can effectively reduce the removal rate (RR) and static etch rate (SER) of Cu. The results revealed that with the increase of TTA-K concentration, the passivation effect was enhanced. The dishing and erosion test results showed that the TTA - K can effectively reduce the depth of dishing and erosion with different line widths and spaces. Electrochemistry, XPS and SEM measurement was implemented to characterize the mechanism of TTA-K passivation.
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