霍奇金-赫胥黎轴突记忆模型

2021 12th International Symposium on Advanced Topics in Electrical Engineering (ATEE) Pub Date : 2021-03-25 DOI:10.1109/ATEE52255.2021.9425098

A. Ionescu, Alina Oroşanu, M. Iordache

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引用次数: 0

摘要

本文的目的是在霍奇金-赫胥黎模型的基础上进行深入研究，强调沿神经轴突整个长度分布的钠离子通道和钾离子通道可以由两个有源忆阻器组成。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Memristive model of the Hodgkin-Huxley axon

The purpose of this paper is to conduct an in-depth study based on the Hodgkin-Huxley model and to highlight that the sodium and potassium ion channels distributed along the entire length of the neural axons can be composed of two active memristors.

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来源期刊

2021 12th International Symposium on Advanced Topics in Electrical Engineering (ATEE)

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