用于呼气生物标志物检测的CMOS-MEMS谐振器中多晶硅压阻的建模与仿真

2015 6th International Conference on Intelligent Systems, Modelling and Simulation Pub Date : 2015-02-09 DOI:10.1109/ISMS.2015.27

A. Rabih, J. Dennis, H. Khir, M. Abdalrahman, A. Ahmed

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引用次数: 5

摘要

本文研究了沉积在CMOS-MEMS谐振器最大应力点上的纵向和横向多晶硅电阻，用于质量检测。当驱动电压在50 ~ 180 V之间变化时，纵向安装的电阻随应力增大而增大，最大电阻变化为10 ~ 23 O，而横向安装的电阻在给定电压下从0.8 O减小到0.4 O。为了得到最大输出电压，研究了Wheatstone电桥的可能配置，当两个等纵向电阻与两个等外部电阻连接形成半桥结构时，最大输出电压为14 mV。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Modelling and Simulation of Polysilicon Piezoresistors in CMOS-MEMS Resonator for Biomarker Detection in Exhaled Breath

This research studies longitudinal and transverse polysilicon resistors deposited in the maximum stress points of a CMOS-MEMS resonator for mass detection. The longitudinally mounted resistors were found to increase with the stress and giving maximum of resistance change of 10 to 23 O when the actuation voltage was varied from 50 to 180 V, while the transverse resistors were found to decrease from 0.8 to 0.4 O for the given voltages. Possible Wheatstone bridge configurations were studied to get the maximum output voltage, which was found to be 14 mV when two equal longitudinal resistors are connected with two equal external resistors to form a half bridge configuration.

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2015 6th International Conference on Intelligent Systems, Modelling and Simulation

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