{"title":"用于高速模拟数字转换器的GaAs HJBT和硅双极技术的比较","authors":"A. Joy, A. Holden, T. Leslie, P. Saul","doi":"10.1109/ESSCIRC.1988.5468275","DOIUrl":null,"url":null,"abstract":"The potential using the emerging GaAlAs/GaAs heterojunction bipolar transistor (HJBT) technology is all-parallel analog-to-digital (A/D) converters is studied. To put into perspective the HJBT predictions made, a comparison of the ultimate performance levels achievable with contemporary silicon bipolar processes is given. Optimized latched compensators were developed for each technology and simulations on SPICE were carried out to determine the maximum sample rate and large-signal analog bandwidths that would be achieved. As both technologies are produced in-house, models were available for processors in the latter stages of development, namely the standard 1- mu m silicon bipolar process, and the 4- mu m HJBT process, as well as processes at an earlier stage of development, the enhanced 1- mu m silicon bipolar processes and the 2.5- mu m HJBT process. This enabled the trend of performance improvements with time to be compared. >","PeriodicalId":197244,"journal":{"name":"ESSCIRC '88: Fourteenth European Solid-State Circuits Conference","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"A Comparison of GaAs HJBT and Silicon Bipolar Technologies For High Speed Analogue to Digital Converters\",\"authors\":\"A. Joy, A. Holden, T. Leslie, P. Saul\",\"doi\":\"10.1109/ESSCIRC.1988.5468275\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The potential using the emerging GaAlAs/GaAs heterojunction bipolar transistor (HJBT) technology is all-parallel analog-to-digital (A/D) converters is studied. To put into perspective the HJBT predictions made, a comparison of the ultimate performance levels achievable with contemporary silicon bipolar processes is given. Optimized latched compensators were developed for each technology and simulations on SPICE were carried out to determine the maximum sample rate and large-signal analog bandwidths that would be achieved. As both technologies are produced in-house, models were available for processors in the latter stages of development, namely the standard 1- mu m silicon bipolar process, and the 4- mu m HJBT process, as well as processes at an earlier stage of development, the enhanced 1- mu m silicon bipolar processes and the 2.5- mu m HJBT process. This enabled the trend of performance improvements with time to be compared. >\",\"PeriodicalId\":197244,\"journal\":{\"name\":\"ESSCIRC '88: Fourteenth European Solid-State Circuits Conference\",\"volume\":\"32 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ESSCIRC '88: Fourteenth European Solid-State Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSCIRC.1988.5468275\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC '88: Fourteenth European Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.1988.5468275","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
摘要
研究了利用新兴的GaAlAs/GaAs异质结双极晶体管(HJBT)技术实现全并行模数(A/D)转换器的潜力。为了把透视HJBT预测，最终性能水平可实现与当代硅双极工艺的比较给出。针对每种技术开发了优化的锁存补偿器，并在SPICE上进行了仿真，以确定将实现的最大采样率和大信号模拟带宽。由于这两种技术都是内部生产的，因此在后期开发阶段的处理器，即标准的1 μ m硅双极工艺和4 μ m HJBT工艺，以及在早期开发阶段的工艺，增强的1 μ m硅双极工艺和2.5 μ m HJBT工艺，都可以使用模型。这样就可以比较性能随时间的改进趋势。>
A Comparison of GaAs HJBT and Silicon Bipolar Technologies For High Speed Analogue to Digital Converters
The potential using the emerging GaAlAs/GaAs heterojunction bipolar transistor (HJBT) technology is all-parallel analog-to-digital (A/D) converters is studied. To put into perspective the HJBT predictions made, a comparison of the ultimate performance levels achievable with contemporary silicon bipolar processes is given. Optimized latched compensators were developed for each technology and simulations on SPICE were carried out to determine the maximum sample rate and large-signal analog bandwidths that would be achieved. As both technologies are produced in-house, models were available for processors in the latter stages of development, namely the standard 1- mu m silicon bipolar process, and the 4- mu m HJBT process, as well as processes at an earlier stage of development, the enhanced 1- mu m silicon bipolar processes and the 2.5- mu m HJBT process. This enabled the trend of performance improvements with time to be compared. >
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