亚阈值下UTBB MOSFET的全局变异性

2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) Pub Date : 2013-10-01 DOI:10.1109/S3S.2013.6716585

S. Makovejev, B. K. Esfeh, F. Andrieu, J. Raskin, D. Flandre, V. Kilchytska

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引用次数: 1

摘要

分析了UTBB mosfet在亚阈值和关断状态下的全局变异性。考虑了断态漏极电流、亚阈值斜率、DIBL、栅极漏电流、阈值电压的变异性及其相关关系。结果表明，亚阈值漏极电流变异性不仅取决于阈值电压变异性，而且还必须考虑有效体因子(包括短通道效应)。

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Global variability of UTBB MOSFET in subthreshold

Global variability of UTBB MOSFETs in subthresh-old and off regimes is analyzed. Variability of the off-state drain current, subthreshold slope, DIBL, gate leakage current, threshold voltage and their correlations are considered. It is demonstrated that subthreshold drain current variability is not only dependent on the threshold voltage variability, but the effective body factor (incorporating short-channel effects) must also be taken into account.

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2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)

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