基于掺杂Gd-O的嵌入式RRAM

2016 IEEE 8th International Memory Workshop (IMW) Pub Date : 2016-05-15 DOI:10.1109/IMW.2016.7495266

C. Y. Chen, L. Goux, A. Fantini, A. Redolfi, G. Groeseneken, M. Jurczak

{"title":"基于掺杂Gd-O的嵌入式RRAM","authors":"C. Y. Chen, L. Goux, A. Fantini, A. Redolfi, G. Groeseneken, M. Jurczak","doi":"10.1109/IMW.2016.7495266","DOIUrl":null,"url":null,"abstract":"In this paper we propose a novel oxide-based RRAM stack using hygroscopic oxide, doped Gd-O, as resistive switching layer integrated in a CMOS friendly flow. Operating at 50μA, the stack features large resistive window (>x100) and superior endurance lifetime (10^12) which is to our knowledge the record lifetime for CMOS compatible RRAM devices. Detailed benchmarking between conventional oxide-based RRAM is also made throughout this study.","PeriodicalId":365759,"journal":{"name":"2016 IEEE 8th International Memory Workshop (IMW)","volume":"170 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Doped Gd-O Based RRAM for Embedded Application\",\"authors\":\"C. Y. Chen, L. Goux, A. Fantini, A. Redolfi, G. Groeseneken, M. Jurczak\",\"doi\":\"10.1109/IMW.2016.7495266\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we propose a novel oxide-based RRAM stack using hygroscopic oxide, doped Gd-O, as resistive switching layer integrated in a CMOS friendly flow. Operating at 50μA, the stack features large resistive window (>x100) and superior endurance lifetime (10^12) which is to our knowledge the record lifetime for CMOS compatible RRAM devices. Detailed benchmarking between conventional oxide-based RRAM is also made throughout this study.\",\"PeriodicalId\":365759,\"journal\":{\"name\":\"2016 IEEE 8th International Memory Workshop (IMW)\",\"volume\":\"170 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-05-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE 8th International Memory Workshop (IMW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMW.2016.7495266\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 8th International Memory Workshop (IMW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMW.2016.7495266","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 9

摘要

在本文中，我们提出了一种新的基于氧化物的RRAM堆栈，使用吸湿氧化物，掺杂Gd-O，作为集成在CMOS友好流中的电阻开关层。该堆栈工作在50μA，具有大的电阻窗(>x100)和优越的持久寿命(10^12)，据我们所知，这是CMOS兼容RRAM器件的记录寿命。在整个研究过程中，还对传统的基于氧化物的RRAM进行了详细的基准测试。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Doped Gd-O Based RRAM for Embedded Application

In this paper we propose a novel oxide-based RRAM stack using hygroscopic oxide, doped Gd-O, as resistive switching layer integrated in a CMOS friendly flow. Operating at 50μA, the stack features large resistive window (>x100) and superior endurance lifetime (10^12) which is to our knowledge the record lifetime for CMOS compatible RRAM devices. Detailed benchmarking between conventional oxide-based RRAM is also made throughout this study.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2016 IEEE 8th International Memory Workshop (IMW)

自引率

0.00%

发文量