Effects of forward body biasing on the high frequency noise in deep submicron NMOSFETs

In this paper, the impact of forward body biasing on the high frequency noise in deep sub-micrometer NMOSFETs is presented. Experimental results show that high frequency noise is increased with the body bias Vb, and have a positive dependence on the substrate bias. Possible mechanism behind the increase in RF noise of MOSFET under the forward body bias is studied. The increase of NFmin and Rn with the increase in Vb may appear as a great concern for the application of forward body bias scheme in the low noise circuit design.