二氧化钒薄膜系列单极单投开关

K. Pan, E. Shin, Kelvin Freeman, Weisong Wang, Dustin Brown, G. Subramanyam
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引用次数: 4

摘要

二氧化钒(VO2)薄膜在临界温度72℃以上具有独特的绝缘体到金属的转变。在这项研究中,VO2薄膜沉积在蓝宝石衬底上,用于集成加热线圈的热可控射频/微波开关器件。基于VO2薄膜的器件在室温下具有绝缘体性能,在80℃时具有金属态(低阻相)。使用VO2系列压敏电阻设计的开关器件在高达20 GHz的范围内具有良好的隔离性(-5 dB)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Vanadium dioxide thin film series single-pole single throw switch
Vanadium dioxide (VO2) thin films have unique insulator to metal transition above the critical temperature of 72 °C. In this research, VO2 thin films were deposited on a sapphire substrate for thermally controllable RF/microwave switching devices with integrated heating coil. The VO2 thin film based devices showed insulator performance at room temperature and metallic state (low resistive phase) at 80 °C. Switching devices designed using a VO2 series varistor showed good isolation (<; -30 dB) and low insertion loss (> -5 dB) up to 20 GHz.
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