J. Ajayan, D. Nirmal, S. Sivasankari, D. Sivaranjani, M. Manikandan
{"title":"基于电流比较的高速低功耗全加法器电路设计","authors":"J. Ajayan, D. Nirmal, S. Sivasankari, D. Sivaranjani, M. Manikandan","doi":"10.1109/ICDCSYST.2014.6926166","DOIUrl":null,"url":null,"abstract":"In this paper, a new Full Adder circuit is designed using current comparison based domino logic style, which has a lower leakage and higher noise immunity along with high speed. This circuit achieved high speed and better noise immunity by reducing the parasitic capacitance on the dynamic node, yielding a keeper in the pull up network. The leakage current is reduced by introducing a transistor in diode configuration. The full adder circuit is simulated in 0.12μm CMOS technology with VDD =1.2V. The total average power dissipation is 24μw at temperature T=120°C with a layout area of 116μm2The total capacitance at the dynamic node is computed as 8fF from the layout and this capacitance includes all the parasitic capacitances associated with the dynamic node.","PeriodicalId":252016,"journal":{"name":"2014 2nd International Conference on Devices, Circuits and Systems (ICDCS)","volume":"101 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"High speed low power Full Adder circuit design using current comparison based domino\",\"authors\":\"J. Ajayan, D. Nirmal, S. Sivasankari, D. Sivaranjani, M. Manikandan\",\"doi\":\"10.1109/ICDCSYST.2014.6926166\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a new Full Adder circuit is designed using current comparison based domino logic style, which has a lower leakage and higher noise immunity along with high speed. This circuit achieved high speed and better noise immunity by reducing the parasitic capacitance on the dynamic node, yielding a keeper in the pull up network. The leakage current is reduced by introducing a transistor in diode configuration. The full adder circuit is simulated in 0.12μm CMOS technology with VDD =1.2V. The total average power dissipation is 24μw at temperature T=120°C with a layout area of 116μm2The total capacitance at the dynamic node is computed as 8fF from the layout and this capacitance includes all the parasitic capacitances associated with the dynamic node.\",\"PeriodicalId\":252016,\"journal\":{\"name\":\"2014 2nd International Conference on Devices, Circuits and Systems (ICDCS)\",\"volume\":\"101 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-03-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 2nd International Conference on Devices, Circuits and Systems (ICDCS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICDCSYST.2014.6926166\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 2nd International Conference on Devices, Circuits and Systems (ICDCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICDCSYST.2014.6926166","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High speed low power Full Adder circuit design using current comparison based domino
In this paper, a new Full Adder circuit is designed using current comparison based domino logic style, which has a lower leakage and higher noise immunity along with high speed. This circuit achieved high speed and better noise immunity by reducing the parasitic capacitance on the dynamic node, yielding a keeper in the pull up network. The leakage current is reduced by introducing a transistor in diode configuration. The full adder circuit is simulated in 0.12μm CMOS technology with VDD =1.2V. The total average power dissipation is 24μw at temperature T=120°C with a layout area of 116μm2The total capacitance at the dynamic node is computed as 8fF from the layout and this capacitance includes all the parasitic capacitances associated with the dynamic node.