用单表达式法对放大型Gires-Tournois微干涉仪进行数值模拟

Proceedings of 2003 5th International Conference on Transparent Optical Networks, 2003. Pub Date : 2003-06-29 DOI:10.1109/ICTON.2003.1263159

H. Baghdasaryan, T. Knyazyan, A. Mankulov

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引用次数: 0

摘要

用单表达式法对放大型半导体栅格-图尔诺微干涉仪模型进行了正确的分析。在不同的有源瞬变层厚度值下，得到了干涉仪的光谱特性随反射镜与有源瞬变层之间距离的变化规律。确定了光最大放大的最优有源层厚度和反射镜与有源层之间的距离。得到了结构能谱特征点处的电场和功率流密度沿结构的分布。

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Numerical modelling of amplifying Gires-Tournois microinterferometer by the method of single expression

A model of an amplifying semiconductor Gires-Tournois microinterferometer is correctly analysed by the method of single expression (MSE). Interferometer's spectral characteristics versus the distance between the mirror and the active transient layer are obtained for different values of the active layer thickness. The optimal values of the active layer thickness and the distance between the mirror and the active layer for light maximal amplification are defined. Distributions of electric field and power flow density along the structure are obtained at the characteristic points of the structure's spectra.

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Proceedings of 2003 5th International Conference on Transparent Optical Networks, 2003.

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