UTB SOI mosfet的高温透视

Ulis 2011 Ultimate Integration on Silicon Pub Date : 2011-03-14 DOI:10.1109/ULIS.2011.5758013

V. Kilchytska, F. Andrieu, O. Faynot, D. Flandre

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引用次数: 4

摘要

在本文中，我们首次分析了超薄体(UTB) SOI mosfet的高温视角。通过测量和二维仿真，详细分析了阈值电压、亚阈值斜率、跨导最大值和导通电流的高温行为。特别关注了埋藏氧化物(BOX)和硅膜厚度以及通道掺杂对主要器件参数在温度范围内退化的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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High-temperature perspectives of UTB SOI MOSFETs

In this paper, we analyze, for the first time to our best knowledge, the high-temperature perspectives of Ultra-thin body (UTB) SOI MOSFETs. High-temperature behavior of threshold voltage, subthreshold slope, transconductance maximum and on-current is analyzed in details through measurements and 2D simulations. Particular attention is paid to the effect of buried oxide (BOX) and Si film thicknesses as well as channel doping on the degradation of main device parameters over the temperature range.

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Ulis 2011 Ultimate Integration on Silicon

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